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DSM80101M डेटा पत्रक PDF( Datasheet डाउनलोड )


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भाग संख्या DSM80101M
समारोह NPN TRANSISTOR
मैन्युफैक्चरर्स Diodes 
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DSM80101M pdf
Maximum Ratings Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current @ DC Increment for IC;
IB = 300mA; Test Duration >10s for each Step
Base Current
Symbol
VCBO
VCEO
VEBO
IC(MAX)
ICM
IB
Maximum Ratings D1, D2 (@TA = +25°C, unless otherwise specified.)
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 5)
Average Rectified Output Current (Note 5)
Non-Repetitive Peak Forward Surge Current @ t = 1.0µs
Symbol
VRM
VRRM
VRWM
VR
VR(RMS)
IFM
IO
IFSM
Value
80
80
6.0
500
0.8
200
DSM80101M
Unit
V
V
V
mA
A
mA
Value
100
75
53
300
200
20
Unit
V
V
V
mA
mA
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient Air (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RJA
TJ, TSTG
Value
600
208
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Symbol Min Typical
BVCBO
BVCEO
BVEBO
ICBO
VCE(SAT)
80
80
6.0
hFE 120 180
Max
100
0.3
350
Unit
V
V
V
nA
V
Test Condition
IC = 100µA, IE = 0
IC = 1.0mA, IB = 0
IE = 100µA, IC = 0
VCB = 80V, IE = 0
IC = 100mA, IB = 10mA
IC = 10mA, VCE = 1.0V
Electrical Characteristics D1, D2 (@TA = +25°C, unless otherwise specified.)
Characteristic
Reverse Breakdown Voltage (Note 6)
Forward Voltage
Leakage Current (Note 6)
Total Capacitance
Reverse Recovery Time
Symbol
V(BR)R
VF
IR
CT
trr
Min
75
Max
0.715
0.855
1.0
1.25
0.1
25
2.0
4
Unit
V
V
µA
nA
pF
ns
Test Condition
IR = 100µA
IF = 5.0mA
IF = 10mA
IF = 50mA
IF = 150mA
VR = 75V
VR = 20V
VR = 0V, f = 1.0MHz
IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100Ω
Notes:
5. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
DSM80101M
Document number: DS37318 Rev. 2 - 2
2 of 6
www.diodes.com
November 2014
© Diodes Incorporated

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