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HY1001P डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - HOOYI

भाग संख्या HY1001P
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स HOOYI 
लोगो HOOYI लोगो 
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<?=HY1001P?> डेटा पत्रक पीडीएफ

HY1001P pdf
HY1001M/P
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
TC=25°C
IDP 300µs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
Avalanche Ratings
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
EAS Avalanche Energy, Single Pulsed
L=0.3mH,VD=50V
Rating
70
25
175
-55 to 175
75
290
75
70
105
75
0.5
62.5
580
Unit
V
°C
°C
A
A
A
W
°C/W
mJ
Electrical Characteristics
(T
A
=
25°C
Unless
Otherwise
Noted)
Symbol
Parameter
Test Conditions
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a Drain-Source On-state Resistance
Diode Characteristics
VSDa Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS=0V, IDS=250µA
VDS=75V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VGS=±25V, VDS=0V
VGS=10V, IDS=40A
ISD=40A, VGS=0V
ISD=40A, dlSD/dt=100A/µs
Min.
70
-
-
2
-
-
-
-
-
HY1001M/P
Typ. Max.
--
-1
- 10
34
- ±100
7.8 9
0.8 1
100 -
380 -
Unit
V
µA
V
nA
m
V
ns
nC
2 www.hooyi-semi.com

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डाउनलोड[ HY1001P Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

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