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KF3N60P डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL MOS FIELD EFFECT TRANSISTOR - KEC

भाग संख्या KF3N60P
समारोह N-CHANNEL MOS FIELD EFFECT TRANSISTOR
मैन्युफैक्चरर्स KEC 
लोगो KEC लोगो 
पूर्व दर्शन
1 Page
		
<?=KF3N60P?> डेटा पत्रक पीडीएफ

KF3N60P pdf
KF3N60P/F
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
BVDSS
ID=250 , VGS=0V
BVDSS/ Tj ID=250 , Referenced to 25
IDSS VDS=600V, VGS=0V,
Vth VDS=VGS, ID=250
IGSS VGS= 30V, VDS=0V
RDS(ON)
VGS=10V, ID=1.5A
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS=480V, ID=3A
VGS=10V
(Note4,5)
VDD=300V
ID=3A
RG=25
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
IS
VGS<Vth
ISP
VSD IS=3A, VGS=0V
trr IS=3A, VGS=0V,
Qrr dIs/dt=100A/
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=24.5mH, IS=3A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 3A, dI/dt 100A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking
MIN. TYP. MAX. UNIT
600 - - V
- 0.61 - V/
- - 10
2.5 - 4.5 V
- - 100 nA
- 2.8 3.3
- 8.5 -
- 1.8 -
- 3.6 -
- 25 -
- 25 -
- 40 -
- 20 -
- 355 -
- 45 -
- 4.4 -
nC
ns
pF
- -3
A
- - 12
- - 1.4 V
- 300 -
ns
- 1.5 -
C
1
1
KF3N60
P 001
2
KF3N60
F 001
2
1 PRODUCT NAME
2 LOT NO
2010. 12. 20
Revision No : 0
2/2

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डाउनलोड[ KF3N60P Datasheet.PDF ]


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