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KF3N40D डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL MOS FIELD EFFECT TRANSISTOR - KEC

भाग संख्या KF3N40D
समारोह N-CHANNEL MOS FIELD EFFECT TRANSISTOR
मैन्युफैक्चरर्स KEC 
लोगो KEC लोगो 
पूर्व दर्शन
1 Page
		
<?=KF3N40D?> डेटा पत्रक पीडीएफ

KF3N40D pdf
KF3N40D/I
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
BVDSS
ID=250 A, VGS=0V
BVDSS/ Tj ID=250 A, Referenced to 25
IDSS VDS=400V, VGS=0V,
Vth VDS=VGS, ID=250 A
IGSS VGS= 30V, VDS=0V
RDS(ON)
VGS=10V, ID=1.1A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS=320V, ID=2.2A
VGS=10V
(Note4,5)
VDD=200V, ID=2.2A
RG=25
VGS=10V
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
Source-Drain Diode Ratings
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS
VGS<Vth
ISP
VSD IS=2.2A, VGS=0V
trr IS=2.2A, VGS=0V,
Qrr dIs/dt=100A/ s
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L = 19mH, IS=2.2A, VDD=50V, RG = 25 , Starting Tj = 25
Note 3) IS 2A, dI/dt 200A/ , VDD BVDSS, Starting Tj = 25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
.
Note 5) Essentially independent of operating temperature.
MIN. TYP. MAX. UNIT
400 - - V
- 0.4 - V/
- - 10 A
2.5 - 4.5 V
- - 100 nA
- 2.8 3.4
- 4.4 5.8
- 1.0 - nC
- 2.0 -
- 10 -
- 11 -
ns
- 20 -
- 17 -
- 163 211
- 26 - pF
- 2.5 -
- -2
A
- -8
- - 1.4 V
- 240 -
ns
- 0.65 -
C
Marking
KF3N40
D 001
1 KF3N40
2 I 001
1
2
1 PRODUCT NAME
2 LOT NO
2010. 8. 23
Revision No : 0
2/6

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डाउनलोड[ KF3N40D Datasheet.PDF ]


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