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FBM80N70P डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - FBM

भाग संख्या FBM80N70P
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स FBM 
लोगो FBM लोगो 
पूर्व दर्शन
1 Page
		
<?=FBM80N70P?> डेटा पत्रक पीडीएफ

FBM80N70P pdf
FBM80N70P/B
FBM@
Absolute Maximum Ratings
Symbol
Parameter
Rating
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
TC=25°C
70
±25
175
-55 to 175
80
IDM Pulsed Drain Current *
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
EAS Drain-Source Avalanche Energy
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
L=0.5mH
320**
80
65
180
90
0.83
62.5
650***
Note * Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
*** VD=55V
Electrical Characteristics (TC = 25°C Unless Otherwise Noted)
Unit
V
°C
°C
A
A
A
W
°C/W
°C/W
mJ
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON)* Drain-Source On-state Resistance
Diode Characteristics
VSD * Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
FBM80N70
Unit
Min. Typ. Max.
VGS=0V, IDS=250µA
VDS=70V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VGS=±25V, VDS=0V
VGS=10V, IDS=40A
70
-
-
2
-
-
- -V
-1
µA
- 10
3 4V
- ±100 nA
6 7 m
ISD=40A, VGS=0V
- 0.8 1 V
- 55 - ns
IDS=40A, dlSD/dt=100A/µs
-
100
-
nC
2

विन्यास 11 पेज
डाउनलोड[ FBM80N70P Datasheet.PDF ]


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