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FDD86326 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - Fairchild Semiconductor

भाग संख्या FDD86326
समारोह MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDD86326?> डेटा पत्रक पीडीएफ

FDD86326 pdf
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
'BVDSS
'TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 PA, VGS = 0 V
ID = 250 PA, referenced to 25 °C
VDS = 64 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
80
V
67 mV/°C
1
±100
PA
nA
On Characteristics (Note 2)
VGS(th)
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 PA
ID = 250 PA, referenced to 25 °C
VGS = 10 V, ID = 8 A
VGS = 6 V, ID = 4.6 A
VGS = 10 V, ID = 8 A, TJ = 125 °C
VDS = 10 V, ID = 8 A
2
3.1 4
V
-8.5 mV/°C
19 23
26 37 m:
33 44
21 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 50 V, VGS = 0 V,
f = 1 MHz
780 1035
180 240
15 25
0.4
pF
pF
pF
:
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 50 V, ID = 8 A,
VGS = 10 V, RGEN = 6 :
VGS = 0 V to 10 V
VGS = 0 V to 5 V VDD = 50 V,
ID = 8 A
7.6 15
3.0 10
13.4 24
2.9 10
13.4 19
7.6 11
4.0
3.7
ns
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 8 A
VGS = 0 V, IS = 2.6 A
(Note 2)
(Note 2)
0.8 1.3
0.7 1.2
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 8 A, di/dt = 100 A/Ps
43 68 ns
43 68 nC
Notes:
1. RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RTJCis guaranteed by design while RTJA is determined by the user’s board design.
a. 40 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 96 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.
3. Starting TJ = 25°C, L = 3 mH, IAS = 9 A, VDD = 80 V, VGS = 10 V.
©2010 Fairchild Semiconductor Corporation
FDD86326 Rev.C2
2
www.fairchildsemi.com

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डाउनलोड[ FDD86326 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FDD86326MOSFETFairchild Semiconductor
Fairchild Semiconductor


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