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FDD86367_F085 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - Fairchild Semiconductor

भाग संख्या FDD86367_F085
समारोह MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
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<?=FDD86367_F085?> डेटा पत्रक पीडीएफ

FDD86367_F085 pdf
Electrical Characteristics TJ = 25°C unless otherwise noted.
Symbol
Parameter
Off Characteristics
Test Conditions
Min. Typ. Max. Units
BVDSS Drain-to-Source Breakdown Voltage
IDSS Drain-to-Source Leakage Current
IGSS
Gate-to-Source Leakage Current
On Characteristics
ID = 250μA, VGS = 0V
VDS=80V, TJ = 25oC
VGS = 0V TJ = 175oC (Note 4)
VGS = ±20V
80
-
-
-
- -V
- 1 μA
- 1 mA
- ±100 nA
VGS(th)
RDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
Dynamic Characteristics
VGS = VDS, ID = 250μA
ID = 80A, TJ = 25oC
VGS= 10V TJ = 175oC (Note 4)
2
-
-
34V
3.3 4.2 mΩ
6.6 8.4 mΩ
Ciss
Coss
Crss
Rg
Qg(ToT)
Qg(th)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Gate Charge
Gate-to-Drain “Miller“ Charge
Switching Characteristics
VDS = 40V, VGS = 0V,
f = 1MHz
VGS = 0.5V, f = 1MHz
VGS = 0 to 10V
VGS = 0 to 2V
VDD = 40V
ID = 80A
- 4840
-
- 814
-
- 31
-
- 2.3
-
- 68 88
- 8.8 -
- 22 -
- 14 -
pF
pF
pF
Ω
nC
nC
nC
nC
ton
td(on)
tr
td(off)
tf
toff
Turn-On Time
Turn-On Delay
Rise Time
Turn-Off Delay
Fall Time
Turn-Off Time
Drain-Source Diode Characteristics
VDD = 40V, ID = 80A,
VGS = 10V, RGEN = 6Ω
- - 104 ns
- 20 - ns
- 49 - ns
- 36 - ns
- 16 - ns
- - 80 ns
VSD Source-to-Drain Diode Voltage
trr Reverse-Recovery Time
Qrr Reverse-Recovery Charge
ISD = 80A, VGS = 0V
ISD = 40A, VGS = 0V
VDD = 64V, IF = 80A,
dISD/dt = 100A/μs
- - 1.3 V
- - 1.2 V
- 68 102 ns
- 66 106 nC
Note:
4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.
©2015 Fairchild Semiconductor Corporation
FDD86367_F085 Rev. 1.0
2
www.fairchildsemi.com

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