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FDD5810 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Logic Level Trench MOSFET - Fairchild Semiconductor

भाग संख्या FDD5810
समारोह N-Channel Logic Level Trench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDD5810?> डेटा पत्रक पीडीएफ

FDD5810 pdf
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (VGS = 10V)
Drain Current Continuous (VGS = 5V)
Continuous (TA = 25oC, VGS = 10V, with RθJA = 52oC/W)
Pulsed
EAS Single Pulse Avalanche Energy (Note 1)
PD
Power Dissipation
Derate above 25oC
TJ, TSTG
Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
Maximum Thermal resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
Package Marking and Ordering Information
Device Marking
FDD5810
Device
FDD5810
Package
TO-252AA
Reel Size
330mm
Ratings
60
±20
37
33
7.4
Figure 4
45
72
0.48
-55 to 175
2.1
52
Tape Width
16mm
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
Quantity
2500 units
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
VDS = 48V
VGS = 0V
TC = 150oC
VGS = ±20V
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
RDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250μA
ID = 32A, VGS = 10V
ID = 29A, VGS = 5V
ID
TJ
=
=
3127A5,oCVGS
=
10V,
Dynamic Characteristics
Ciss
Coss
Crss
RG
Qg
Qg
Qg(th)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V,
f = 1MHz
f = 1MHz
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 30V
ID = 35A
Min Typ Max Units
60 - - V
-
-
-
-
1
250
μA
- - ±100 nA
1 1.6 2
V
- 18 22
- 22 27 mΩ
- 43 53
- 1420 1890 pF
-
150 200
pF
- 65 100 pF
- 3.5 -
Ω
- 24 34 nC
- 13 18 nC
- 1.3 - nC
- 4.0 - nC
- 2.7 - nC
- 5.0 - nC
FDD5810 Rev. A (W)
2
www.fairchildsemi.com

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