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IRF7494PbF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF7494PbF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRF7494PbF pdf
IRF7494PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage 150 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.13 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance ––– 35
f44 mVGS = 10V, ID = 3.1A
VGS(th)
Gate Threshold Voltage
2.5 ––– 4.0
V VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
––– ––– 10 µA VDS = 120V, VGS = 0V
––– ––– 250
VDS = 120V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs Forward Transconductance
12 ––– ––– S VDS = 50V, ID = 5.1A
Qg Total Gate Charge
––– 35 53
ID = 3.1A
Qgs Gate-to-Source Charge
––– 6.4 ––– nC VDS = 75V
fQgd
Gate-to-Drain ("Miller") Charge
––– 13 –––
VGS = 10V
td(on)
Turn-On Delay Time
––– 9 –––
VDD = 75V
tr Rise Time
––– 10 –––
ID = 3.1A
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 29 ––– ns RG = 6.8
––– 14 –––
fVGS = 10V
Ciss Input Capacitance
––– 1783 –––
VGS = 0V
Coss Output Capacitance
––– 222 –––
VDS = 25V
Crss
Reverse Transfer Capacitance
––– 104 ––– pF ƒ = 1.0MHz
Coss
Coss
Coss eff.
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 886 –––
––– 121 –––
––– 189 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 120V, ƒ = 1.0MHz
gVGS = 0V, VDS = 0V to 120V
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
ÙIAR Avalanche Current
Typ.
–––
–––
Max.
262
3.1
Units
mJ
A
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
45
93
Max. Units
Conditions
MOSFET symbol
D
2.3
A
showing the
integral reverse
G
40
p-n junction diode.
S
f1.3 V TJ = 25°C, IS = 3.1A, VGS = 0V
f––– ns TJ = 25°C, IF = 3.1A, VDD = 25V
––– nC di/dt = 100A/µs
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