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IRF7524D1PbF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF7524D1PbF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRF7524D1PbF pdf
IRF7524D1PbF
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
RDS(on)
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
-20 ––– ––– V VGS = 0V, ID = -250µA
––– 0.17 0.27
––– 0.28 0.40
VGS = -4.5V, ID = -1.2A ƒ
VGS = -2.7V, ID = -0.60A ƒ
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
-0.70 ––– ––– V VDS = VGS, ID = -250µA
1.3 ––– ––– S VDS = -10V, ID = -0.60A
IDSS
Drain-to-Source Leakage Current
––– ––– -1.0
––– ––– -25
µA
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100
––– ––– 100
nA
VGS = -12V
VGS = 12V
Qg Total Gate Charge
––– 5.4 8.2
ID = -1.2A
Qgs Gate-to-Source Charge
––– 0.96 1.4 nC VDS = -16V
Qgd Gate-to-Drain ("Miller") Charge ––– 2.4 3.6 VGS = -4.5V, See Fig. 6 ƒ
td(on)
tr
td(off)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
––– 9.1 –––
VDD = -10V
––– 35 –––
––– 38 –––
ns
ID = -1.2A
RG = 6.0
tf Fall Time
Ciss Input Capacitance
––– 43 –––
––– 240 –––
RD = 8.3, ƒ
VGS = 0V
Coss Output Capacitance
––– 130 ––– pF
Crss Reverse Transfer Capacitance
––– 64 –––
MOSFET Source-Drain Ratings and Characteristics
VDS = -15V
ƒ = 1.0MHz, See Fig. 5
Parameter
Min. Typ. Max. Units
Conditions
IS
ISM
Continuous Source Current(Body Diode) ––– ––– -1.25
Pulsed Source Current (Body Diode) ––– ––– -9.6
A
VSD Body Diode Forward Voltage
––– ––– -1.2 V TJ = 25°C, IS = -1.2A, VGS = 0V
trr Reverse Recovery Time (Body Diode) ––– 52 78 ns TJ = 25°C, IF = -1.2A
Qrr Reverse Recovery Charge
––– 63 95 nC di/dt = 100A/µs ƒ
Schottky Diode Maximum Ratings
Parameter
Max. Units
IF(av) Max. Average Forward Current
1.9
1.4
A
ISM
Max. peak one cycle Non-repetitive
120
Surge current
11 A
Schottky Diode Electrical Specifications
Conditions
50% Duty Cycle. Rectangular Wave, TA = 25°C
See Fig.14
TA = 70°C
5µs sine or 3µs Rect. pulse
Following any rated
10ms sine or 6ms Rect. pulse load condition &
with VRRM applied
Parameter
VFM Max. Forward voltage drop
IRM Max. Reverse Leakage current
Ct
dv/dt
Max. Junction Capacitance
Max. Voltage Rate of Charge
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
2
Max. Units
0.50
0.62
0.39
V
0.57
0.02 mA
8
92 pF
3600 V/ µs
Conditions
IF = 1.0A, TJ = 25°C
IF = 2.0A, TJ = 25°C
IF = 1.0A, TJ = 125°C
IF = 2.0A, TJ = 125°C .
VR = 20V TJ = 25°C
TJ = 125°C
VR = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated VR
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