DataSheet.in

IRF7459PbF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF7459PbF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
1 Page
		
<?=IRF7459PbF?> डेटा पत्रक पीडीएफ

IRF7459PbF pdf
IRF7459PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
20
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient –––
–––
RDS(on)
Static Drain-to-Source On-Resistance –––
–––
VGS(th)
IDSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
0.6
–––
–––
Gate-to-Source Forward Leakage
–––
IGSS
Gate-to-Source Reverse Leakage
–––
––– –––
0.024 –––
6.7 9.0
8.0 11
11 22
––– 2.0
––– 20
––– 100
––– 200
––– -200
V
V/°C
m
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 12A ƒ
VGS = 4.5V, ID = 9.6A ƒ
VGS = 2.8V, ID = 6.0A ƒ
VDS = VGS, ID = 250µA
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
VGS = 12V
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
32 ––– ––– S VDS = 16V, ID = 9.6A
––– 23 35
ID = 9.6A
––– 6.6 10 nC VDS = 10V
––– 6.3 9.5
VGS = 4.5V ƒ
––– 17 26
VGS = 0V, VDS = 10V
––– 10 –––
VDD = 10V,
––– 4.5 ––– ns ID = 9.6A
––– 20 –––
RG = 1.8
––– 5.0 –––
VGS = 4.5V ƒ
––– 2480 –––
VGS = 0V
––– 1030 –––
VDS = 10V
––– 130 ––– pF ƒ = 1.0MHz
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy‚
IAR Avalanche Current
Typ.
–––
–––
Max.
290
12
Units
mJ
A
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
2
Min.
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max.
––– 2.5
––– 100
0.84 1.3
0.69 –––
70 105
70 105
70 105
75 113
Units
A
V
ns
nC
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 9.6A, VGS = 0V ƒ
TJ = 125°C, IS = 9.6A, VGS = 0V
TJ = 25°C, IF = 9.6A, VR= 15V
di/dt = 100A/µs ƒ
TJ = 125°C, IF = 9.6A, VR=15V
di/dt = 100A/µs ƒ
www.irf.com

विन्यास 8 पेज
डाउनलोड[ IRF7459PbF Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRF7459PbFPower MOSFETInternational Rectifier
International Rectifier


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English