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FDZ4670S डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel PowerTrench SyncFET - Fairchild Semiconductor

भाग संख्या FDZ4670S
समारोह N-Channel PowerTrench SyncFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDZ4670S?> डेटा पत्रक पीडीएफ

FDZ4670S pdf
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 1mA, VGS = 0V
ID = 1mA, referenced to 25°C
VGS = 0V, VDS = 24V,
VGS = ±20V, VDS = 0V
30 V
25 mV/°C
500
±100
µA
nA
On Characteristics
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 1mA
1.0 1.8 3.0
V
ID = 1mA, referenced to 25°C
-3.6 mV/°C
VGS = 10V, ID = 25A
VGS = 4.5V, ID = 19A
VGS = 10V, ID = 25A, TJ = 125°C
VDD = 10V, ID = 25A
1.7 2.4
2.8 4.0 m
2.7 3.6
118 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15V, VGS = 0V,
f = 1MHz
f = 1MHz
2890
1610
160
1.0
3845
2145
240
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 15V, ID = 25A,
VGS = 10V, RGEN = 6
VGS = 10V
VDD = 15V
ID = 25A
13 23 ns
4.5 10
ns
31 50 ns
3.1 10
ns
49 69 nC
9.1 nC
7.6 nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 3.5A
(Note 2)
IF = 25A, di/dt = 300A/µs
0.4 0.7
V
37 ns
46 nC
NOTES:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50°C/W when mounted on
a 1 in2 pad of 2 oz copper.
b. 100°C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
©2008 Fairchild Semiconductor Corporation
FDZ4670S Rev.B1
2
www.fairchildsemi.com

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