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FDZ4670 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel PowerTrench MOSFET BGA - Fairchild Semiconductor

भाग संख्या FDZ4670
समारोह N-Channel PowerTrench MOSFET BGA
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDZ4670?> डेटा पत्रक पीडीएफ

FDZ4670 pdf
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
30
ID = 250μA, referenced to 25°C
-30
V
mV/°C
VDS = 24V, VGS = 0V
VGS = ±20V, VDS = 0V
1
±100
μA
nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250μA
ID = 250μA, referenced to 25°C
VGS = 10V, ID = 25A
VGS = 4.5V, ID = 18.5A
VGS = 10V, ID = 25A, TJ = 125°C
VDD= 10V, ID = 25A
1
1.7 3
V
4.4 mV/°C
1.9 2.5
3.0 4.5 mΩ
2.6 3.8
114 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15V, VGS = 0V,
f = 1MHz
f = 1MHz
2660
1440
180
1.0
3540
1920
270
pF
pF
pF
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 15V, ID = 1.0A,
VGS = 10V, RGEN = 6Ω
VGS = 10V, VDD = 15V,
ID = 25A
15 27 ns
11 20 ns
50 80 ns
67 107 ns
40 56 nC
7 nC
6 nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 1.8A (Note 2)
IF = 25A, di/dt = 100A/μs
0.7 1.2
V
46 69 ns
28 42 nC
NOTES:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJCis determined by
the user's board design.
a. 50°C/W when mounted on
a 1 in2 pad of 2 oz copper.
b. 100°C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
©2007 Fairchild Semiconductor Corporation
FDZ4670 Rev.D
2
www.fairchildsemi.com

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डाउनलोड[ FDZ4670 Datasheet.PDF ]


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