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DMN2170U डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR - Diodes

भाग संख्या DMN2170U
समारोह N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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DMN2170U pdf
DMN2170U
10
8
6
4
2
0
0.5
0.4 VGS = 1.5V
1,000
f = 1MHz
0.3
0.2
0.1
0
0
1
VGS = 2.5V
VGS = 4.5V
1 23 456
ID, DRAIN-SOURCE CURRENT
Fig. 3 On-Resistance vs.
Drain-Source Current & Gate Voltage
7
100
Ciss
Coss
Crss
10
0 5 10 15 20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 4 Typical Total Capacitance
1.8
1.6
0.8 ID = 250µA
VGS = 2.5V
ID = 2.3A
1.4 VGS = 4.5V
0.6 ID = 3A
1.2
VGS = 1.5V
0.4 ID = 0.5A
1.0
0.2
0.8
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (C)
Fig. 5 Gate Threshold Variation with Ambient Temperature
0.6
-55 25 85 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 Normalized Static Drain-Source On-Resistance
vs. Ambient Temperature
DMN2170U
Document number: DS31182 Rev. 4 - 2
2 of 4
www.diodes.com
June 2008
© Diodes Incorporated

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