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FDI8442_F085 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDI8442_F085
समारोह N-Channel PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDI8442_F085?> डेटा पत्रक पीडीएफ

FDI8442_F085 pdf
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC<158oC, VGS = 10V)
Drain Current Continuous (Tamb = 25oC, VGS = 10V, with RTJA = 62oC/W)
Pulsed
EAS Single Pulse Avalanche Energy
Power Dissipation
PD Derate above 25oC
(Note 1)
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
Ratings
40
±20
80
23
See Figure 4
720
254
1.7
-55 to +175
Units
V
V
A
mJ
W
W/oC
oC
RTJC
RTJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Package Marking and Ordering Information
(Note 2)
0.59
62
oC/W
oC/W
Device Marking
FDI8442
Device
FDI8442_F085
Package
TO-262AB
Reel Size
Tube
Tape Width
N/A
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ
Off Characteristics
BVDSS
IDSS
IGSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250PA, VGS = 0V
VDS = 32V
VGS = 0V
TJ = 150°C
VGS = r20V
40
-
-
-
-
-
-
-
Quantity
50 units
Max Units
-
1
250
r100
V
PA
nA
On Characteristics
VGS(th) Gate to Source Threshold Voltage
rDS(on) Drain to Source On Resistance
Dynamic Characteristics
Ciss
Coss
Crss
RG
Qg(TOT)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = VGS, ID = 250PA
ID = 80A, VGS = 10V
ID = 80A, VGS = 10V,
TJ = 175°C
2 2.9 4
V
- 2.3 3.1
- 3.9 5.3 m:
VDS = 25V, VGS = 0V,
f = 1MHz
- 12200 -
- 1040 -
- 640 -
pF
pF
pF
VGS = 0.5V, f = 1MHz
VGS = 0 to 10V
VGS = 0 to 2V
VDD = 20V
ID = 80A
Ig = 1mA
-
-
-
-
-
1.0 -
181 235
23 30
49 -
26 -
:
nC
nC
nC
nC
- 41 - nC
FDI8442_F085 Rev. A
2 www.fairchildsemi.com

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डाउनलोड[ FDI8442_F085 Datasheet.PDF ]


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भाग संख्याविवरणविनिर्माण
FDI8442_F085N-Channel PowerTrench MOSFETFairchild Semiconductor
Fairchild Semiconductor


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