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HUF75333P3 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel UltraFET Power MOSFETs - Fairchild Semiconductor

भाग संख्या HUF75333P3
समारोह N-Channel UltraFET Power MOSFETs
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=HUF75333P3?> डेटा पत्रक पीडीएफ

HUF75333P3 pdf
HUF75333G3, HUF75333P3, HUF75333S3S, HUF75333S3
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . .
Derate Above 25oC
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PD
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . .TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . Tpkg
55
55
±20
66
Figure 4
Figures 6, 14, 15
150
1
-55 to 175
300
260
UNITS
V
V
V
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
BVDSS
IDSS
IGSS
ID = 250µA, VGS = 0V (Figure 11)
VDS = 50V, VGS = 0V
VDS = 45V, VGS = 0V, TC = 150oC
VGS = ±20V
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
VGS(TH)
rDS(ON)
VGS = VDS, ID = 250µA (Figure 10)
ID = 66A, VGS = 10V (Figure 9)
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
RθJC
RθJA
(Figure 3)
TO-247
TO-220, TO-263
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
tON
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
Turn-Off Time
tOFF
GATE CHARGE SPECIFICATIONS
VDD = 30V, ID 66A,
RL = 0.455, VGS = 10V,
RGS = 6.8
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Qg(TOT)
Qg(10)
Qg(TH)
Qgs
Qgd
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 30V,
ID 66A,
RL = 0.455
Ig(REF) = 1.0mA
(Figure 13)
MIN TYP MAX UNITS
55 - - V
- - 1 µA
- - 250 µA
-
-
±100
nA
2-4V
- 0.013 0.016
- - 1 oC/W
- - 30 oC/W
- - 62 oC/W
- - 100 ns
- 12 -
ns
- 55 -
ns
- 11 -
ns
- 25 -
ns
- - 55 ns
- 70 85 nC
- 40 50 nC
-
2.5 3.0
nC
- 6.2 -
nC
- 16 - nC
©2003 Fairchild Semiconductor Corporation
HUF75333G3, HUF75333P3, HUF75333S3S, HUF75333S3 Rev. B1

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