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FDD6688S डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 30V N-Channel PowerTrench SyncFET - Fairchild Semiconductor

भाग संख्या FDD6688S
समारोह 30V N-Channel PowerTrench SyncFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDD6688S?> डेटा पत्रक पीडीएफ

FDD6688S pdf
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Drain-Source Avalanche Ratings (Note 2)
WDSS
Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID = 21A
IAR Drain-Source Avalanche Current
Off Characteristics
BVDSS
Drain–Source Breakdown
Voltage
BVDSS
TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS Gate–Body Leakage
VGS = 0 V,
ID = 1mA
ID = 15mA, Referenced to 25°C
VDS = 24 V,
VGS = ± 20 V,
VGS = 0 V
VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
gFS Forward Transconductance
VDS = VGS,
ID = 1mA
ID = 15mA, Referenced to 25°C
VGS = 10 V, ID = 18.5 A
VGS = 4.5 V, ID = 16.5 A
VGS = 10 V, ID = 18.5 A, TJ=125°C
VDS = 5 V,
ID = 18.5 A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
Crss Reverse Transfer Capacitance
RG Gate Resistance
VGS = 15 mV, f = 1.0 MHz
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg(TOT)
Total Gate Charge at Vgs=10V
Qg Total Gate Charge at Vgs=5V
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6
VDD = 15 V, ID = 18.5 A
Min Typ Max
501
21
30
30
500
± 100
1 1.4
–0.3
3
4.0 5.1
4.7 6.3
6.0 7.5
72
3290
900
300
1.6
13 23
13 23
31 50
64 103
58 81
31 44
8
10
Units
mJ
A
V
mV/°C
µA
nA
V
mV/°C
m
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
FDS6688S Rev C (W)

विन्यास 8 पेज
डाउनलोड[ FDD6688S Datasheet.PDF ]


शेयर लिंक


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