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FDJ1032C डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Complementary PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDJ1032C
समारोह Complementary PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDJ1032C?> डेटा पत्रक पीडीएफ

FDJ1032C pdf
Package Marking and Ordering Information
Device Marking
.H
Device
FDJ1032C
Reel Size
7"
Tape width
8mm
Quantity
3000 units
Electrical Characteristics
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain-Source Breakdown
Voltage
VGS = 0 V, ID = –250 µA
VGS = 0 V, ID = 250 µA
BVDSS
TJ
Breakdown Voltage Temperature ID = –250 µA, Referenced to 25°C
Coefficient
ID = 250 µA, Referenced to 25°C
IDSS
Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V
VDS = 16 V, VGS = 0 V
IGSS
Gate-Body Leakage
VGS = ±8 V, VDS = 0 V
VGS = ±12 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
gFS Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = –250 µA
VDS = VGS, ID = 250 µA
ID = –250 µA, Referenced to 25°C
ID = 250 µA, Referenced to 25°C
VGS = –4.5 V, ID = –2.8 A
VGS = –2.5 V, ID = –2.2 A
VGS = –1.8 V, ID = –1.7 A
VGS = –4.5 V, ID =2.8A, TJ = 125°C
VGS = 4.5 V, ID = 3.2 A
VGS = 2.5 V, ID = 2.7 A
VGS = 4.5 V, ID = 3.2, TJ = 125°C
VDS = –5 V, ID = – 2.8 A
VDS = 5 V, ID = 3.2 A
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q1:
VDS = –10 V, VGS = 0 V, f = 1.0 MHz
Q2:
VDS = 10 V, VGS = 0 V, f = 1.0 MHz
RG Gate Resistance
VGS =
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Q1:
VDD = –10 V, ID = –1 A,
VGS = –4.5 V, RGEN = 6
Q2:
VDD = 10 V, ID = 1 A,
VGS = 4.5V, RGEN = 6
Type Min Typ Max Units
Q1 –20
Q2 20
V
Q1 –13 mV/°C
Q2 13
Q1 –1 µA
Q2 1
Q1 ±100 nA
Q2 ±100
Q1 –0.4 –0.8 –1.5
Q2 0.6 1.0 1.5
V
Q1 3 mV/°C
Q2 –3
Q1 108 160 m
163 230
283 390
150 238
Q2 70 90
100 130
83 132
Q1 5
Q2 7.5
S
Q1 290 pF
Q2 200
Q1 55 pF
Q2 50
Q1 29 pF
Q2 30
Q1 14
Q2 3
Q1 8 16 ns
Q2 7 14
Q1
13 23
ns
Q2 8 16
Q1
13 23
ns
Q2 11 20
Q1
18 32
ns
Q2 2 4
FDJ1032C Rev. B2(W)
2
www.fairchildsemi.com

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डाउनलोड[ FDJ1032C Datasheet.PDF ]


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भाग संख्याविवरणविनिर्माण
FDJ1032CComplementary PowerTrench MOSFETFairchild Semiconductor
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