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B1109 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 2SB1109 - Hitachi Semiconductor

भाग संख्या B1109
समारोह 2SB1109
मैन्युफैक्चरर्स Hitachi Semiconductor 
लोगो Hitachi Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=B1109?> डेटा पत्रक पीडीएफ

B1109 pdf
2SB1109, 2SB1110
Electrical Characteristics (Ta = 25°C)
2SB1109
2SB1110
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO
–160 —
–200 —
—V
IC = –10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
–160 —
–200 —
—V
IC = –1 mA, RBE =
Emitter to base
breakdown voltage
V(BR)EBO –5 — — –5 — — V
IE = –10 µA, IC = 0
Collector cutoff current ICBO
DC current tarnsfer
ratio
h *1
FE1
— — –10 — — — µA VCB = –140 V, IE = 0
— — — — — –10 µA VCE = –160 V, IE = 0
60 — 320 60 — 320
VCE = –5 V, IC = –10
mA
hFE2
Base to emitter voltage VBE
Collector to emitter
saturation voltage
VCE(sat)
30 — — 30 — —
— — –1.5 — — –1.5 V
— — –2 — — –2 V
VCE = –5 V, IC = –1 mA
IC = –5 V, IC = –10 mA
IC = –30 mA, IB = –3
mA
Gain bandwidth product fT
— 140 — — 140 — MHz VCE = –5 V, IC = –10
mA
Collector output
capacitance
Cob — 5.5 — — 5.5 — pF VCB = –10 V, IE = 0, f =
1 MHz
Note: 1. The 2SB1109 and 2SB1110 are grouped by hFE1 as follows.
B
60 to 120
CD
100 to 200 160 to 320
Maximum Collector Dissipation Curve
1.5
1.0
0.0
0 50 100 150
Ambient Temperature Ta (°C)
Typical Output Characteristics
–20
–16 –120
–110
–100
–12 –90
–80
–70
–8 –60
–50
–40
–4 –30
–20
–10 µA
IB = 0
0 –2 –4 –6 –8 –10
Collector to emitter Voltage VCE (V)
2

विन्यास 5 पेज
डाउनलोड[ B1109 Datasheet.PDF ]


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