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TISP9110LDM डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INTEGRATED COMPLEMENTARY BUFFERED-GATE SCRS - Bourns

भाग संख्या TISP9110LDM
समारोह INTEGRATED COMPLEMENTARY BUFFERED-GATE SCRS
मैन्युफैक्चरर्स Bourns 
लोगो Bourns लोगो 
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TISP9110LDM pdf
TISP9110LDM Overvoltage Protector
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating
Symbol Value Unit
Repetitive peak off-state voltage
VG1(Line) = 0, VG2 +5 V
VG2(Line) = 0, VG1 -5 V
Non-repetitive peak impulse current (see Notes 1, 2, 3 and 4)
2/10 µs (Telcordia GR-1089-CORE)
5/310 µs (ITU-T K.20, K.21 & K.45, K.44 open-circuit voltage wave shape 10/700 µs)
10/1000 µs (Telcordia GR-1089-CORE)
VDRM
IPPSM
-120
+120
±100
±45
±30
V
A
Non-repetitive peak on-state current, 50 Hz / 60 Hz (see Notes 1, 2, 3 and 5)
0.2 s
1s
900 s
ITSM
9.0
5.0 A
1.7
Maximum negative battery supply voltage
Maximum positive battery supply voltage
Maximum differential battery supply voltage
Junction temperature
Storage temperature range
VG1M
-110
VG2M
+110
V(BAT)M
220
TJ -40 to +150
Tstg -65 to +150
V
V
V
°C
°C
NOTES: 1. Initially the device must be in thermal equilibrium with TJ = 25 °C. The surge may be repeated after the device returns to its initial
conditions .
2. The rated current values may be applied to either of the Line to Ground terminal pairs. Additionally, both terminal pairs may have
their rated current values applied simultaneously (in this case the Ground terminal current will be twice the rated current value of a
single terminal pair).
3. Rated currents only apply if pins 6 & 7 (Ground) are connected together.
4. Applies for the following bias conditions: VG1 = -20 V to -110 V, VG2 = 0 V to +110 V.
5. EIA/JESD51-2 environment and EIA/JESD51-7 high effective thermal conductivity test board (multi-layer) connected with 0.6 mm
printed wiring track widths.
Electrical Characteristics for any Section, TA = 25 °C (Unless Otherwise Noted)
Parameter
Test Conditions
Min Typ Max Unit
ID
IG1(Line)
IG2(Line)
VG1L(BO)
VG2L(BO)
IH-
IG1T
IG2T
CO
Off-state current
VD = VDRM, VG1(Line) = 0, VG2 +5 V
VD = VDRM, VG2(Line) = 0, VG1 -5 V
Negative-gate leakage current
Positive-gate leakage current
Gate - Line impulse breakover voltage
Gate - Line impulse breakover voltage
Negative holding current
Negative-gate trigger current
Positive-gate trigger current
Line - Ground off-state capacitance
VG1(Line) = -220 V
VG2(Line) = +220 V
VG1 = -100 V, IT = -100 A (see Note 6)
VG1 = -100 V, IT = -30 A
VG2 = +100 V, IT = +100 A (see Note 6)
VG2 = +100 V, IT = +30 A
VG1 = -60 V, IT = -1 A, di/dt = 1 A/ms
IT = -5 A, tp(g) 20 µs, VG1 = -60 V
IT = 5 A, tp(g) 20 µs, VG2 = 60 V
f = 1 MHz, VD = -3 V, G1 & G2 open circuit
TA = 25 °C
TA = 85 °C
TA = 25 °C
TA = 85 °C
2/10 µs
10/1000 µs
2/10 µs
10/1000 µs
-150
32
-5
-50
+5
µA
+50
-5 µA
+5 µA
-15
-11
V
+15
+11
V
mA
+5 mA
-5 mA
pF
NOTE: 6. Voltage measurements should be made with an oscilloscope with limited bandwidth (20 MHz) to avoid high frequency noise.
AUGUST 2004 – REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.

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डाउनलोड[ TISP9110LDM Datasheet.PDF ]


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