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QM2517C1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual P-Ch 20V Fast Switching MOSFETs - UBIQ

भाग संख्या QM2517C1
समारोह Dual P-Ch 20V Fast Switching MOSFETs
मैन्युफैक्चरर्स UBIQ 
लोगो UBIQ लोगो 
पूर्व दर्शन
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<?=QM2517C1?> डेटा पत्रक पीडीएफ

QM2517C1 pdf
QM2517C1
Dual P-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS
gfs
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=-250uA
Reference to 25, ID=-1mA
VGS=-4.5V , ID=-1A
VGS=-2.5V , ID=-0.5A
VGS=VDS , ID =-250uA
VDS=-16V , VGS=0V , TJ=25
VDS=-16V , VGS=0V , TJ=55
VGS=±12V , VDS=0V
VDS=-5V , ID=-1A
VDS=-15V , VGS=-4.5V , ID=-1A
VDD=-10V , VGS=-4.5V , RG=3.3Ω
ID=-1A
VDS=-15V , VGS=0V , f=1MHz
Min.
-20
---
---
---
-0.5
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
-0.012
185
270
-0.8
2.2
---
---
---
3.1
2.9
0.51
0.81
2
8
23
14.8
190
33
27
Max.
---
---
240
350
-1.2
---
-1
-5
±100
---
4.1
0.7
1.1
4.0
14.4
46
29.6
266
46.2
37.8
Unit
V
V/
mΩ
V
mV/
uA
nA
S
nC
ns
pF
Drain-Source Body Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Conditions
Continuous Source-Drain Diode Current1,4
Pulsed Diode Forward Current2,4
VG=VD=0V
,
Force
Current
Body Diode Voltage2
VGS=0V , IS=-1A , TJ=25
Reverse Recovery Time
Reverse Recovery Charge
IF=-2A , dI/dt=100A/µs , TJ=25
Min.
---
---
---
---
---
Typ.
---
---
---
6.2
2
Max.
-1
-5
-1.2
---
---
Unit
A
A
V
nS
nC
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The power dissipation is limited by 150junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2

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भाग संख्याविवरणविनिर्माण
QM2517C1Dual P-Ch 20V Fast Switching MOSFETsUBIQ
UBIQ


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