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QM3010G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Ch 30V Fast Switching MOSFETs - UBIQ

भाग संख्या QM3010G
समारोह N-Ch 30V Fast Switching MOSFETs
मैन्युफैक्चरर्स UBIQ 
लोगो UBIQ लोगो 
पूर्व दर्शन
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<?=QM3010G?> डेटा पत्रक पीडीएफ

QM3010G pdf
QM3010G
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VGS=10V , ID=4A
VGS=4.5V , ID=2A
VGS=VDS , ID =250uA
VDS=24V , VGS=0V , TJ=25
VDS=24V , VGS=0V , TJ=55
VGS=±20V , VDS=0V
VDS=5V , ID=4A
VDS=0V , VGS=0V , f=1MHz
VDS=15V , VGS=4.5V , ID=4A
VDD=15V , VGS=10V , RG=3.3Ω
ID=4A
VDS=15V , VGS=0V , f=1MHz
Min.
30
---
---
---
1.0
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
0.016
45
60
1.5
-3.04
---
---
---
5.8
2.3
2.72
0.87
1.04
0.8
19.2
7.6
4
220
38
32
Max.
---
---
55
75
2.5
---
1
5
±100
---
4.6
3.81
1.22
1.46
1.6
34.6
15.2
8.0
308.0
53.2
44.8
Unit
V
V/
mΩ
V
mV/
uA
nA
S
Ω
nC
ns
pF
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25
IF=4A , dI/dt=100A/µs , TJ=25
Min.
---
---
---
---
---
Typ.
---
---
---
7.2
1.4
Max.
4.2
16.8
1
---
---
Unit
A
A
V
nS
nC
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The power dissipation is limited by 150junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2

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