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MBRF10100CT डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual High Voltage Trench MOS Barrier Schottky Rectifier - Vishay

भाग संख्या MBRF10100CT
समारोह Dual High Voltage Trench MOS Barrier Schottky Rectifier
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
<?=MBRF10100CT?> डेटा पत्रक पीडीएफ

MBRF10100CT pdf
www.vishay.com
MBRF1090CT, MBRF10100CT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL MBRF1090CT MBRF10100CT
Maximum instantaneous forward voltage
per diode (1)
Maximum reverse current per diode at
working peak reverse voltage (2)
IF = 5.0 A
IF = 5.0 A
TC = 125 °C
TC = 25 °C
TJ = 25 °C
TJ = 100 °C
VF
IR
0.75
0.85
100
6.0
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
UNIT
V
μA
mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBRF1090CT
Typical thermal resistance per diode
RJC
MBRF10100CT
6.8
UNIT
°C/W
ORDERING INFORMATION (EXAMPLE)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
ITO-220AB
MBRF10100CT-M3/4W
1.75
PACKAGE CODE BASE QUANTITY DELIVERY MODE
4W
50/tube
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
12
Resistive or Inductive Load
10
8
6
4
2
Mounted on Specific Heatsink
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
120
TJ = TJ Max.
100 8.3 ms Single Half Sine-Wave
80
60
40
20
0
1 10 100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Revision: 16-Aug-13
2 Document Number: 89126
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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