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Si1067X डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel 20 V (D-S) MOSFET - Vishay

भाग संख्या Si1067X
समारोह P-Channel 20 V (D-S) MOSFET
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
<?=Si1067X?> डेटा पत्रक पीडीएफ

Si1067X pdf
Si1067X
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductance
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 8 V
VDS = - 20 V, VGS = 0 V
VDS = - 20 V, VGS = 0 V, TJ = 85 °C
VDS = 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 1.06 A
VGS = - 2.5 V, ID = - 1.0 A
VGS = - 1.8 V, ID = - 0.49 A
VDS = - 10 V, ID = - 1.06 A
Ciss
Coss
Crss
Qg
VDS = - 10 V, VGS = 0 V, f = 1 MHz
VDS = - 10 V, VGS = - 5 V, ID = - 1.06 A
Gate-Source Charge
Qgs VDS = - 10 V, VGS = - 4.5 V, ID = - 1.06 A
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rg
td(on)
f = 1 MHz
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 10 V, RL = 19.74
ID - 0.76 A, VGEN = - 4.5 V, Rg = 1
Fall Time
tf
Drain-Source Body Diode Characteristics
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
Body Diode Reverse Recovery Time
VSD
trr
IS = - 0.63 A
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = - 0.7 A, dI/dt = 100 A/µs
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
- 20
- 0.45
-8
Typ.
- 32.07
3.02
0.125
0.138
0.165
4.0
375
82
62
6.5
6.0
0.76
2.23
8.8
14
22
48
17
0.8
12.8
4.5
7.3
5.5
Max.
- 0.95
± 100
-1
- 10
0.150
0.166
0.214
9.3
9.1
13.2
21
33
72
25.5
8
1.2
19.2
6.8
Unit
V
mV/°C
V
nA
µA
A
S
pF
nC
ns
A
V
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 74322
S10-2542-Rev. D, 08-Nov-10

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