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RUE002N05 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 1.2V Drive Nch MOSFET - Rohm

भाग संख्या RUE002N05
समारोह 1.2V Drive Nch MOSFET
मैन्युफैक्चरर्स Rohm 
लोगो Rohm लोगो 
पूर्व दर्शन
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RUE002N05 pdf
RUE002N05
Electrical characteristics (Ta = 25C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR)DSS
Zero gate voltage drain current IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
RDS (on*)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
*Pulsed
l Yfs l *
Ciss
Coss
Crss
td(on)*
tr *
td(off)*
tf *
Min.
-
50
-
0.3
-
-
-
-
-
0.4
-
-
-
-
-
-
-
Typ.
-
-
-
-
1.6
1.7
1.9
2.0
2.4
-
25
6
3
4
6
15
55
Max.
10
-
1
1.0
2.2
2.4
2.7
4.0
7.2
-
-
-
-
-
-
-
-
Unit Conditions
A VGS=8V, VDS=0V
V ID=1mA, VGS=0V
A VDS=50V, VGS=0V
V VDS=10V, ID=1mA
ID=200mA, VGS=4.5V
ID=200mA, VGS=2.5V
ID=100mA, VGS=1.8V
ID=40mA, VGS=1.5V
ID=20mA, VGS=1.2V
S ID=200mA, VDS=10V
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=100mA, VDD 30V
ns VGS=4.5V
ns RL=300
ns RG=10
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Symbol Min.
Typ.
Forward voltage
VSD *
-
-
*Pulsed
Max. Unit
Conditions
1.2 V Is=200mA, VGS=0V
Data Sheet
www.rohm.com
c 2010 ROHM Co., Ltd. All rights reserved.
2/5
2010.06 - Rev.B

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डाउनलोड[ RUE002N05 Datasheet.PDF ]


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