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QS6J11 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual Pch -12V -2.0A Power MOSFET - Rohm

भाग संख्या QS6J11
समारोह Dual Pch -12V -2.0A Power MOSFET
मैन्युफैक्चरर्स Rohm 
लोगो Rohm लोगो 
पूर्व दर्शन
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<?=QS6J11?> डेटा पत्रक पीडीएफ

QS6J11 pdf
QS6J11
Data Sheet
lThermal resistance
Parameter
Symbol
Thermal resistance, junction - ambient
Thermal resistance, junction - ambient
lElectrical characteristics (Ta = 25°C)
<It is the same characteristics for the Tr1 and Tr2>
RthJA *3
RthJA *4
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = -1mA
Values
Min. Typ. Max.
Unit
- - 100 °C/W
- - 208 °C/W
Values
Min. Typ. Max.
Unit
-12 - - V
Breakdown voltage
temperature coefficient
ΔV(BR)DSS ID = -1mA
ΔTj referenced to 25°C
- -17 - mV/°C
Zero gate voltage drain current
IDSS VDS = -12V, VGS = 0V
-
- -1 mA
Gate - Source leakage current
IGSS VGS = 10V, VDS = 0V
-
- 10 mA
Gate threshold voltage
VGS (th) VDS = -6V, ID = -1mA -0.3 - -1.0 V
Gate threshold voltage
temperature coefficient
ΔV(GS)th ID = -1mA
ΔTj referenced to 25C
- 2.4 - mV/°C
Static drain - source
on - state resistance
Gate input resistannce
Transconductance
VGS= -4.5V, ID= -2A, Tj=25°C
VGS= -2.5V, ID= -1A, Tj=25°C
RDS(on) *5 VGS= -1.8V, ID= -1A, Tj=25°C
VGS= -4.5V, ID= -2A, Tj=25°C
RG
gfs *5
VGS= -10V, ID= -9A, Tj=125°C
f = 1MHz, open drain
VDS = -6V, ID = -2A
-
-
-
-
-
-
2.0
75
105
150
200
120
3
4.8
105
145
225
400
170
-
-
mW
W
S
*1 Limited only by maximum temperature allowed.
*2 Pw 10ms, Duty cycle 1%
*3 Mounted on a seramic board (30×30×0.8mm)
*4 Mounted on a FR4 (15×20×0.8mm)
*5 Pulsed
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2/11
2012.06 - Rev.B

विन्यास 12 पेज
डाउनलोड[ QS6J11 Datasheet.PDF ]


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