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RZQ045P01 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 1.5V Drive Pch MOSFET - Rohm

भाग संख्या RZQ045P01
समारोह 1.5V Drive Pch MOSFET
मैन्युफैक्चरर्स Rohm 
लोगो Rohm लोगो 
पूर्व दर्शन
1 Page
		
<?=RZQ045P01?> डेटा पत्रक पीडीएफ

RZQ045P01 pdf
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 µA VGS=±10V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 12 − − V ID= 1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 µA VDS= 12V, VGS=0V
Gate threshold voltage
VGS (th) 0.3 − −1.0 V VDS= 6V, ID= 1mA
25 35 mID= 4.5A, VGS= 4.5V
Static drain-source on-state
resistance
RDS (on)
31 43 mID= 2.2A, VGS= 2.5V
39 58 mID= 2.2A, VGS= 1.8V
Forward transfer admittance
50 100 mID= 0.9A, VGS= 1.5V
Yfs 6.5
S VDS= 6V, ID= 4.5A
Input capacitance
Ciss
2450
pF VDS= 6V
Output capacitance
Coss 320 pF VGS=0V
Reverse transfer capacitance Crss
290
Turn-on delay time
td (on) 12
Rise time
tr 75
Turn-off delay time
td (off)
390
Fall time
tf 215
Total gate charge
Qg 31
Gate-source charge
Qgs 4.5
Gate-drain charge
Qgd 4.0
pF f=1MHz
ns ID= 2.2A
ns VDD 6V
VGS= 4.5V
ns RL 2.7
ns RG=10
nC VDD 6V RL 1.3
nC VGS= 4.5V RG=10
nC ID= 4.5A
Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD
− −1.2 V IS= 4.5A, VGS=0V
RZQ045P01
2/5

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