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RUQ050N02 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 1.5V Drive Nch MOSFET - Rohm

भाग संख्या RUQ050N02
समारोह 1.5V Drive Nch MOSFET
मैन्युफैक्चरर्स Rohm 
लोगो Rohm लोगो 
पूर्व दर्शन
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RUQ050N02 pdf
RUQ050N02
Electrical characteristics (Ta=25C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
RDS (on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Pulsed
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
Min.
20
0.3
6.5
Typ.
22
27
32
40
900
190
120
15
25
70
100
12
2.5
1.7
Max.
±10
1
1.0
30
38
45
80
Unit Conditions
μA VGS=±10V, VDS=0V
V ID= 1mA, VGS=0V
μA VDS= 20V, VGS=0V
V VDS= 10V, ID= 1mA
mΩ ID= 5.0A, VGS= 4.5V
mΩ ID= 5.0A, VGS= 2.5V
mΩ ID= 2.5A, VGS= 1.8V
mΩ ID= 1.0A, VGS= 1.5V
S VDS= 10V, ID= 5.0A
pF VDS= 10V
pF VGS=0V
pF f=1MHz
ns VDD 10V
ns ID= 2.5A
VGS= 4.5V
ns RL 4Ω
ns RG=10Ω
nC VDD 10V, ID= 5.0A
nC VGS= 4.5V
nC RL 2Ω, RG=10Ω
Body diode characteristics (Source-drain) (Ta=25C)
Parameter
Symbol Min. Typ. Max. Unit
Forward voltage
VSD
1.2 V
Pulsed
Conditions
IS= 1.0A, VGS=0V
Data Sheet
www.rohm.com
c 2010 ROHM Co., Ltd. All rights reserved.
2/4
2010.08 - Rev.A

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डाउनलोड[ RUQ050N02 Datasheet.PDF ]


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