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RZR040P01 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 1.5V Drive Pch MOSFET - Rohm

भाग संख्या RZR040P01
समारोह 1.5V Drive Pch MOSFET
मैन्युफैक्चरर्स Rohm 
लोगो Rohm लोगो 
पूर्व दर्शन
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<?=RZR040P01?> डेटा पत्रक पीडीएफ

RZR040P01 pdf
RZR040P01
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 µA VGS=±10V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 12 − − V ID= 1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 µA VDS= 12V, VGS=0V
Gate threshold voltage
VGS (th) 0.3 − −1.0 V VDS= 6V, ID= 1mA
22 30 mID= 4A, VGS= 4.5V
Static drain-source on-state
resistance
RDS (on)
30 42 mID= 2A, VGS= 2.5V
40 60 mID= 2A, VGS= 1.8V
Forward transfer admittance
55 110 mID= 0.8A, VGS= 1.5V
Yfs 6.5
S VDS= 6V, ID= 4A
Input capacitance
Ciss
2350
pF VDS= 6V
Output capacitance
Coss 310 pF VGS=0V
Reverse transfer capacitance Crss
280 pF f=1MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td (on) 11
tr 70
td (off)
380
tf 210
ns VDD 6V
ns ID= 2A
VGS= 4.5V
ns RL 3
ns RG=10
Total gate charge
Qg 30 nC VDD 6V RL 1.5
Gate-source charge
Qgs 4.0 nC ID= 4A
RG=10
Gate-drain charge
Qgd 3.5 nC VGS= 4.5V
Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Forward voltage
VSD
− −1.2 V
Pulsed
Conditions
IS= 4A, VGS=0V
Data Sheet
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
2/4
2009.06 - Rev.A

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