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US6M11 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 1.5V Drive Nch+Pch MOSFET - Rohm

भाग संख्या US6M11
समारोह 1.5V Drive Nch+Pch MOSFET
मैन्युफैक्चरर्स Rohm 
लोगो Rohm लोगो 
पूर्व दर्शन
1 Page
		
<?=US6M11?> डेटा पत्रक पीडीएफ

US6M11 pdf
US6M11
<N-ch>
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
RDS (on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Pulsed
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
Min.
20
0.3
1.6
Typ.
130
170
220
300
110
18
15
5
5
20
3
1.8
0.3
0.3
Max.
±10
1
1.0
180
240
310
600
Unit Conditions
µA VGS= ±10V, VDS=0V
V ID= 1mA, VGS=0V
µA VDS= 20V, VGS=0V
V VDS= 10V, ID= 1mA
mID= 1.5A, VGS= 4.5V
mID= 1.5A, VGS= 2.5V
mID= 0.8A, VGS= 1.8V
mID= 0.3A, VGS= 1.5V
S VDS= 10V, ID= 1.5A
pF VDS= 10V
pF VGS=0V
pF f=1MHz
ns VDD 10V
ns ID= 1A
VGS= 4.5V
ns RL 10
ns RG=10
nC VDD 10V, VGS= 4.5V
nC ID= 1.5A
nC RL 6.7Ω, RG= 10
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Pulsed
Symbol Min. Typ. Max. Unit
VSD
1.2 V
Conditions
IS= 1.5A, VGS=0V
<P-ch>
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 µA VGS= ±10V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 12 − − V ID= 1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 µA VDS= 12V, VGS=0V
Gate threshold voltage
VGS (th) 0.3 − −1.0 V VDS= 6V, ID= 1mA
190 260 mID= 1.3A, VGS= 4.5V
Static drain-source on-state
resistance
RDS (on)
280 390 mID= 0.6A, VGS= 2.5V
400 600 mID= 0.6A, VGS= 1.8V
530 1060 mID= 0.2A, VGS= 1.5V
Forward transfer admittance Yfs 1.4 − − S VDS= 6V, ID= 1.3A
Input capacitance
Ciss
290
pF VDS= 6V
Output capacitance
Coss 28 pF VGS= 0V
Reverse transfer capacitance Crss
21 pF f=1MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td (on) 8 ns VDD 6V
tr 10 ns ID= 0.6A
td (off)
30
VGS= 4.5V
ns RL 10
tf 9 ns RG= 10
Total gate charge
Qg 2.4 nC VDD 6V, VGS= 4.5V
Gate-source charge
Qgs 0.6 nC ID= 1.3A
Gate-drain charge
Qgd 0.4 nC RL 4.6Ω, RG= 10
Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Forward voltage
VSD
− −1.2 V
Pulsed
Conditions
IS= 1.3A, VGS=0V
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
2/7
Data Sheet
2009.07 - Rev.A

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डाउनलोड[ US6M11 Datasheet.PDF ]


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