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US6J11 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Pch -12V -1.3A Power MOSFET - Rohm

भाग संख्या US6J11
समारोह Pch -12V -1.3A Power MOSFET
मैन्युफैक्चरर्स Rohm 
लोगो Rohm लोगो 
पूर्व दर्शन
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US6J11 pdf
US6J11
lThermal resistance
Parameter
Thermal resistance, junction - ambient
Data Sheet
Symbol
RthJA *3
RthJA *4
Values
Min. Typ. Max.
Unit
- - 125 °C/W
- - 391 °C/W
lElectrical characteristics, unless otherwise specified (Ta = 25°C)
<It is the same characteristics for the Tr1 and Tr2>
Parameter
Symbol
Conditions
Min.
Values
Typ.
Max.
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = -1mA
-12
-
-
Unit
V
Breakdown voltage
temperature coefficient
ΔV(BR)DSS ID= -1mA
ΔTj referenced to 25°C
- -17 - mV/°C
Zero gate voltage drain current
IDSS VDS = -12V, VGS = 0V
-
- -1 mA
Gate - Source leakage current
IGSS VGS = 10V, VDS = 0V
-
- 10 mA
Gate threshold voltage
VGS (th) VDS = -6V, ID = 1mA
-0.3
-
-1.0
V
Gate threshold voltage
temperature coefficient
ΔV(GS)th ID= -1mA
ΔTj referenced to 25°C
- 2.4 - mV/°C
Static drain - source
on - state resistance
Gate input resistannce
Transconductance
VGS= -4.5V, ID= -1.3A
VGS= -2.5V, ID= -0.6A
RDS(on) *5 VGS= -1.8V, ID= -0.6A
VGS= -1.5V, ID= -0.2A
RG
gfs *5
VGS= -4.5V, ID= -1.3A, Tj=125°C
f = 1MHz, open drain
VDS= -6V, ID= -1.3A
-
-
-
-
-
-
1.4
190 260
280 390
400 600 mW
530 1060
280 400
28 - W
2.8 -
S
*1 Limited only by maximum temperature allowed.
*2 Pw 10ms, Duty cycle 1%
*3 Mounted on a ceramic board (30×30×0.8mm)
*4 Mounted on a FR4 (15×20×0.8mm)
*5 Pulsed
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2/11
2012.10 - Rev.B

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