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RZF013P01 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 1.5V Drive Pch MOSFET - Rohm

भाग संख्या RZF013P01
समारोह 1.5V Drive Pch MOSFET
मैन्युफैक्चरर्स Rohm 
लोगो Rohm लोगो 
पूर्व दर्शन
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<?=RZF013P01?> डेटा पत्रक पीडीएफ

RZF013P01 pdf
RZF013P01
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 µA VGS=±10V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 12 − − V ID= 1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 µA VDS= 12V, VGS=0V
Gate threshold voltage
VGS (th) 0.3 − −1.0 V VDS= 6V, ID= 1mA
190 260 mID= 1.3A, VGS= 4.5V
Static drain-source on-state
resistance
RDS (on)
280 390 mID= 0.6A, VGS= 2.5V
400 600 mID= 0.6A, VGS= 1.8V
Forward transfer admittance
Yfs 1.4
530 1060 mID= 0.2A, VGS= 1.5V
− − S VDS= 6V, ID= 1.3A
Input capacitance
Ciss
290
pF VDS= 6V
Output capacitance
Coss 28 pF VGS=0V
Reverse transfer capacitance Crss
21 pF f=1MHz
Turn-on delay time
td (on)
8
ns VDD 6V
Rise time
Turn-off delay time
Fall time
tr 10 ns ID= 0.6A
td (off)
30
VGS= 4.5V
ns RL 10
tf 9 ns RG=10
Total gate charge
Qg 2.4 nC VDD 6V RL 4.6
Gate-source charge
Qgs 0.6 nC ID= 1.3A RG=10
Gate-drain charge
Qgd 0.4 nC VGS= 4.5V
Pulsed
zBody diode characteristics (Source -drain) (Ta=25°C)
Parameter
Forward voltage
Symbol Min. Typ. Max. Unit
VSD
− −1.2 V
Pulsed
Conditions
IS= 1.3A, VGS=0V
Data Sheet
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
2/5
2009.02 - Rev.A

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