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RUF025N02 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Nch 20V 2.5A Power MOSFET - Rohm

भाग संख्या RUF025N02
समारोह Nch 20V 2.5A Power MOSFET
मैन्युफैक्चरर्स Rohm 
लोगो Rohm लोगो 
पूर्व दर्शन
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<?=RUF025N02?> डेटा पत्रक पीडीएफ

RUF025N02 pdf
RUF025N02
lThermal resistance
Parameter
Thermal resistance, junction - ambient
Data Sheet
Symbol
RthJA *3
RthJA *4
Values
Min. Typ. Max.
Unit
- - 156 °C/W
- - 391 °C/W
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Values
Min. Typ. Max.
Unit
20 - - V
Breakdown voltage
temperature coefficient
ΔV(BR)DSS ID=1mA
ΔTj referenced to 25°C
Zero gate voltage drain current
Gate - Source leakage current
Gate threshold voltage
IDSS
IGSS
VGS (th)
VDS = 20V, VGS = 0V
VGS = 10V, VDS = 0V
VDS = 10V, ID = 1mA
Gate threshold voltage
temperature coefficient
ΔV(GS)th ID=1mA
ΔTj referenced to 25°C
Static drain - source
on - state resistance
Gate input resistannce
Transconductance
VGS=4.5V, ID=2.5A
VGS=2.5V, ID=2.5A
RDS(on) *5 VGS=1.8V, ID=1.3A
VGS=1.5V, ID=0.5A
VGS=4.5V, ID=2.5A, Tj=125°C
RG
gfs *5
f = 1MHz, open drain
VDS=10V, ID=2.5A
*1 Limited only by maximum temperature allowed.
*2 Pw 10ms, Duty cycle 1%
*3 Mounted on a seramic board (30×30×0.8mm)
*4 Mounted on a FR4 (15×20×0.8mm)
*5 Pulsed
-
-
-
0.3
-
-
-
-
-
-
-
3.6
20
-
-
-
-1.9
39
49
65
80
65
7.5
6.0
- mV/°C
1 mA
10 mA
1.3 V
- mV/°C
54
68
91 mW
160
95
-W
-S
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2/11
2013.02 - Rev.B

विन्यास 12 पेज
डाउनलोड[ RUF025N02 Datasheet.PDF ]


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भाग संख्याविवरणविनिर्माण
RUF025N02Nch 20V 2.5A Power MOSFETRohm
Rohm


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