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RUF015N02 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 1.8V Drive Nch MOSFET - Rohm

भाग संख्या RUF015N02
समारोह 1.8V Drive Nch MOSFET
मैन्युफैक्चरर्स Rohm 
लोगो Rohm लोगो 
पूर्व दर्शन
1 Page
		
<?=RUF015N02?> डेटा पत्रक पीडीएफ

RUF015N02 pdf
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
RDS (on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Pulsed
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
Min.
20
0.3
1.6
Typ.
130
170
220
110
18
15
5
5
20
3
1.8
0.3
0.3
Max.
10
1
1.0
180
240
310
2.5
Unit Conditions
µA VGS=10V, VDS=0V
V ID= 1mA, VGS=0V
µA VDS= 20V, VGS=0V
V VDS= 10V, ID= 1mA
mID= 1.5A, VGS= 4.5V
mID= 1.5A, VGS= 2.5V
mID= 0.8A, VGS= 1.8V
S VDS= 10V, ID= 1.5A
pF VDS= 10V
pF VGS=0V
pF f=1MHz
ns ID= 1.0A
ns VDD 10V
VGS= 4.5V
ns RL=10
ns RG=10
nC VDD 10V
nC VGS= 4.5V
nC ID= 1.5A
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Symbol Min. Typ. Max. Unit
Conditions
VSD − − 1.2 V IS= 0.6A, VGS=0V
RUF015N02
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