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EM6J1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 1.2V Drive Pch MOSFET - Rohm

भाग संख्या EM6J1
समारोह 1.2V Drive Pch MOSFET
मैन्युफैक्चरर्स Rohm 
लोगो Rohm लोगो 
पूर्व दर्शन
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<?=EM6J1?> डेटा पत्रक पीडीएफ

EM6J1 pdf
EM6J1
zElectrical characteristics (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 µA VGS= ±10V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 20 − − V ID=1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 µA VDS=20V, VGS=0V
Gate threshold voltage
VGS (th) 0.3 − −1.0 V VDS=10V, ID=100µA
0.8 1.2 ID=200mA, VGS=4.5V
Static drain-source on-state
resistance
RDS
(on)
1.0 1.5
1.3 2.2
1.6 3.5
ID=100mA, VGS=2.5V
ID=100mA, VGS=1.8V
ID=40mA, VGS=1.5V
Forward transfer admittance
2.4 9.6
Yfs 0.2
ID=10mA, VGS=1.2V
S VDS=10V, ID=200mA
Input capacitance
Ciss
115
pF VDS=10V
Output capacitance
Coss 10 pF VGS=0V
Reverse transfer capacitance Crss 6 pF f=1MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td (on)
6
ns VDD 10V
tr 4 ns ID=100mA
td (off)
17
VGS=4.5V
ns RL 100
tf 17 ns RG=10
Total gate charge
Qg 1.4 nC VDD 10V, ID=200mA
Gate-source charge
Qgs 0.3 nC VGS=4.5V
Gate-drain charge
Qgd 0.3 nC RL 50Ω, RG=10
Pulsed
zBody diode characteristics (Source-drain)
Parameter
Forward voltage
Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD
− −1.2 V IS= −200mA, VGS=0V
Data Sheet
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
2/4
2009.05 - Rev.A

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