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RUE003N02 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 1.8V Drive Nch MOSFET - Rohm

भाग संख्या RUE003N02
समारोह 1.8V Drive Nch MOSFET
मैन्युफैक्चरर्स Rohm 
लोगो Rohm लोगो 
पूर्व दर्शन
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<?=RUE003N02?> डेटा पत्रक पीडीएफ

RUE003N02 pdf
RUE003N02
Electrical characteristics (Ta=25C)
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Pulsed
Symbol
IGSS
V(BR)DSS
IDSS
VGS(th)
RDS(on)
|Yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Min.
20
0.3
400
Typ.
0.7
0.8
1.0
25
10
10
5
10
15
10
Max.
10
1.0
1.0
1.0
1.2
1.4
Unit Conditions
μA VGS8V, VDS=0V
V ID=1mA, VGS=0V
μA VDS=20V, VGS=0V
V VDS=10V, ID=1mA
Ω ID=300mA, VGS=4.0V
Ω ID=300mA, VGS=2.5V
Ω ID=300mA, VGS=1.8V
ms ID=300mA, VDS=10V
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=150mA, VDD 10V
ns VGS=4.0V
ns RL=67Ω
ns RG=10Ω
Body diode characteristics (Source-drain) (Ta=25C)
Parameter
Forward voltage
Symbol Min. Typ. Max. Unit
VSD
1.2 V
Pulsed
Conditions
IS= 100mA, VGS=0V
Data Sheet
Electrical characteristic curves
1 VDS=10V
Pulsed
0.1
0.01
Ta=125°C
75°C
0.001 25°C
25°C
0.0001
0.00001
0.0 0.5 1.0 1.5
GATE-SOURCE VOLTAGE : VGS (V)
Fig.1 Typical transfer characteristics
10
Ta=125°C
75°C
25°C
25°C
1
VGS=1.8V
Pulsed
10
Ta=125°C
75°C
25°C
25°C
1
VGS=4V
Pulsed
0.1
0.01
0.1
DRAIN CURRENT : ID (A)
1
Fig.2 Static drain-source on-state
resistance vs. drain current (Ι)
1
VGS=0V
Pulsed
Ta=125°C
75°C
0.1 25°C
25°C
10
Ta=125°C
75°C
25°C
25°C
1
VGS=2.5V
Pulsed
0.1
0.01
0.1
DRAIN CURRENT : ID (A)
1
Fig.3 Static drain-source on-state
resistance vs. drain current (ΙΙ)
100
Ta=25°C
f=1MHZ
VGS=0V
Ciss
10 Coss
Crss
0.1
0.01
0.1
DRAIN CURRENT : ID (A)
1
Fig.4 Static drain-source on-state
resistance vs. drain current (ΙΙΙ)
0.01
0.0 0.5 1 1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.5 Source current vs.
source-drain voltage
1
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.6 Typical capacitance vs.
drain-source voltage
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c 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.05 - Rev.B

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