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RZE002P02 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 1.2V Drive Pch MOSFET - Rohm

भाग संख्या RZE002P02
समारोह 1.2V Drive Pch MOSFET
मैन्युफैक्चरर्स Rohm 
लोगो Rohm लोगो 
पूर्व दर्शन
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<?=RZE002P02?> डेटा पत्रक पीडीएफ

RZE002P02 pdf
RZE002P02
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 µA VGS= ±10V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 20 − − V ID= 1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 µA VDS= 20V, VGS=0V
Gate threshold voltage
VGS (th) 0.3 − −1.0 V VDS= 10V, ID= 100µA
0.8 1.2 ID= 200mA, VGS= 4.5V
Static drain-source on-state
resistance
RDS
(on)
1.0 1.5
1.3 2.2
1.6 3.5
ID= 100mA, VGS= 2.5V
ID= 100mA, VGS= 1.8V
ID= 40mA, VGS= 1.5V
2.4 9.6 ID= 10mA, VGS= 1.2V
Forward transfer admittance Yfs 0.2 − − S VDS= 10V, ID= 200mA
Input capacitance
Ciss
115
pF VDS= 10V
Output capacitance
Coss 10 pF VGS= 0V
Reverse transfer capacitance Crss 6 pF f=1MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td (on) 6 ns VDD 10V
tr
td (off)
4
17
ns ID= 100mA
VGS= 4.5V
ns RL 100
tf 17 ns RG= 10
Total gate charge
Qg 1.4 nC VDD 10V RL 50
Gate-source charge
Qgs 0.3 nC ID= 200mA RG= 10
Gate-drain charge
Qgd 0.3 nC VGS= 4.5V
Pulsed
zBody diode characteristics (Source-drain)
Parameter
Forward voltage
Symbol Min. Typ. Max. Unit
Conditions
VSD
− −1.2 V IS= 200mA, VGS=0V
Pulsed
Data Sheet
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
2/4
2009.06 - Rev.A

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