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HY1707P डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - HOOYI

भाग संख्या HY1707P
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स HOOYI 
लोगो HOOYI लोगो 
पूर्व दर्शन
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<?=HY1707P?> डेटा पत्रक पीडीएफ

HY1707P pdf
HY1707P
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDM 300µs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
EAS Drain-Source Avalanche Energy
Note *Pulse width limited by safe operating area.
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
L=0.3mH
Rating
70
±25
175
-55 to 175
80
320*
80
65
180
75
1.2
62.5
650
Unit
V
°C
°C
A
A
A
W
°C/W
°C/W
mJ
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a Drain-Source On-state Resistance
Diode Characteristics
VSDa Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
HY1707P
Unit
Min. Typ. Max.
VGS=0V, IDS=250µA
70 74 - V
VDS=70V, VGS=0V
TJ=85°C
-
-
-1
µA
- 10
VDS=VGS, IDS=250µA
2 3 4V
VGS=±25V, VDS=0V
- - ±100 nA
VGS=10V, IDS=40A
- 6 7 m
ISD=40A, VGS=0V
- 0.8 1 V
- 55 - ns
IDS=40A, dlSD/dt=100A/µs
-
100
-
nC
2 www.hooyi-semi.com

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डाउनलोड[ HY1707P Datasheet.PDF ]


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