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SP8K33FRA डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 4V Drive Nch+Nch MOSFET - Rohm

भाग संख्या SP8K33FRA
समारोह 4V Drive Nch+Nch MOSFET
मैन्युफैक्चरर्स Rohm 
लोगो Rohm लोगो 
पूर्व दर्शन
1 Page
		
<?=SP8K33FRA?> डेटा पत्रक पीडीएफ

SP8K33FRA pdf
Transistors
zElectrical characteristics (Ta=25°C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
RDS
(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Pulsed
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
Min.
60
1.0
5.0
Typ.
34
38
40
620
145
70
12
20
40
20
8.0
2.0
2.6
Max.
±10
1
2.5
48
54
56
12
Unit Conditions
µA VGS20V, VDS=0V
V ID=1mA, VGS=0V
µA VDS=60V, VGS=0V
V VDS=10V, ID=1mA
ID=5.0A, VGS=10V
mID=5.0A, VGS=4.5V
ID=5.0A, VGS=4.0V
S ID=5.0A, VDS=10V
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=2.5A, VDD 30V
ns VGS=10V
ns RL=12
ns RG =10
nC ID=5.0A, VDD 30V
nC VGS=5V
nC RL=6Ω, RG =10
zBody diode characteristics (Source-drain) (Ta=25°C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Forward voltage
Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD
1.2 V IS=5.0A, VGS=0V
SP8SKP383KF3R3A
2/4

विन्यास 7 पेज
डाउनलोड[ SP8K33FRA Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
SP8K33FRA4V Drive Nch+Nch MOSFETRohm
Rohm


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