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IRFP4004PbF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRFP4004PbF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRFP4004PbF pdf
IRFP4004PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
40 ––– ––– V VGS = 0V, ID = 250µA
––– 0.035 ––– V/°C Reference to 25°C, ID = 5mAd
––– 1.35 1.70 mVGS = 10V, ID = 195A g
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
––– ––– 20 µA VDS = 40V, VGS = 0V
––– ––– 250
VDS = 40V, VGS = 0V, TJ = 125°C
––– ––– 200 nA VGS = 20V
––– ––– -200
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qsync
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
290 ––– –––
––– 220 330
––– 59 –––
––– 75 –––
––– 145 –––
S VDS = 10V, ID = 195A
nC ID = 195A
VDS = 20V
VGS = 10V g
ID = 195A, VDS =0V, VGS = 10V
RG(int)
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Internal Gate Resistance
–––
Turn-On Delay Time
–––
Rise Time
–––
Turn-Off Delay Time
–––
Fall Time
–––
Input Capacitance
–––
Output Capacitance
–––
Reverse Transfer Capacitance
–––
Effective Output Capacitance (Energy Related)i –––
Effective Output Capacitance (Time Related)h –––
6.8
59
370
160
190
8920
2360
930
2860
3110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
ns VDD = 20V
ID = 195A
RG = 2.7
VGS = 10V g
pF VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V i
VGS = 0V, VDS = 0V to 32V h
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) di
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 350c A MOSFET symbol
D
showing the
––– ––– 1390
integral reverse
G
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 195A, VGS = 0V g
––– 83 130 ns TJ = 25°C
VR = 20V,
––– 78 120
TJ = 125°C
––– 190 290 nC TJ = 25°C
IF = 195A
di/dt = 100A/µs g
––– 210 320
TJ = 125°C
––– 4.0 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction „ ISD 195A, di/dt 690A/µs, VDD V(BR)DSS, TJ 175°C.
temperature. Bond wire current limit is 195A. Note that current
… Pulse width 400µs; duty cycle 2%.
limitations arising from heating of the device leads may occur with † Coss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements. Refer to App Notes (AN-1140).
as Coss while VDS is rising from 0 to 80% VDSS.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.015mH
RG = 25, IAS = 195A, VGS =10V. Part not recommended for use
above this value.
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
‰ Rθ is measured at TJ approximately 90°C.
2 www.irf.com

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