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MMDF2N02E डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - ON Semiconductor

भाग संख्या MMDF2N02E
समारोह Power MOSFET
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
पूर्व दर्शन
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<?=MMDF2N02E?> डेटा पत्रक पीडीएफ

MMDF2N02E pdf
MMDF2N02E
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc
Static DraintoSource OnResistance
(VGS = 10 Vdc, ID = 2.2 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 3)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc, RG = 6.0 W)
Fall Time
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 4.5 Vdc, RG = 9.1 W)
Fall Time
Gate Charge
(VDS = 16 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 2)
(IS = 2.0 Adc, VGS = 0 Vdc)
Reverse Recovery Time
See Figure 11
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
Reverse Recovery Storage Charge
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
3. Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
Min Typ Max Unit
25
Vdc
mAdc
− − 1.0
− − 10
− − 100 nAdc
1.0 2.0 3.0
Vdc
0.083 0.100
0.110 0.200
W
1.0 2.6 Mhos
380 532 pF
235 329
55 110
7.0 21
17 30
27 48
18 30
10 30
35 70
19 38
25 50
10.6 30
1.3
2.9
2.7
ns
nC
1.0 1.4
Vdc
34 66 ns
17
17
0.03
mC
http://onsemi.com
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