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STS3DPF60L डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - DUAL P-CHANNEL MOSFET - STMicroelectronics

भाग संख्या STS3DPF60L
समारोह DUAL P-CHANNEL MOSFET
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
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STS3DPF60L pdf
STS3DPF60L
Table 3: Absolute Maximum ratings
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Tstg Storage Temperature
Tj Operating Junction Temperature
(•) Pulse width limited by safe operating area.
Value
60
60
± 16
3
1.9
12
2
-55 to 150
Unit
V
V
V
A
A
A
W
°C
Table 4: Thermal Data
Rthj-amb (*)Thermal Resistance Junction-ambient
(*) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu t 10 s
62.5
t(s)ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
cTable 5: On/Off
uSymbol
Parameter
Test Conditions
Min. Typ. Max.
rodV(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
60
te PIDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating ,TC= 125°C
1
10
oleIGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 16 V
±100
bsVGS(th) Gate Threshold Voltage
VDS = VGS, ID = 250 µA
1.5
Obsolete Product(s) - ORDS(on)
Static Drain-source On
Resistance
VGS = 10 V, ID = 1.5 A
VGS = 4.5 V, ID = 1.5 A
0.10 0.12
0.130 0.160
°C/W
Unit
V
µA
µA
nA
V
2/9

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STS3DPF60LDUAL P-CHANNEL MOSFETSTMicroelectronics
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