DataSheet.in

NTHC5513 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - ON Semiconductor

भाग संख्या NTHC5513
समारोह Power MOSFET
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=NTHC5513?> डेटा पत्रक पीडीएफ

NTHC5513 pdf
NTHC5513
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Junction−to−Ambient (Note 1)
Steady State
tv5
TA = 25°C
RqJA
110
60
2. Surface Mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol N/P
Test Conditions
OFF CHARACTERISTICS (Note 3)
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
V(BR)DSS
IDSS
IGSS
N
P
N
P
N
P
VGS = 0 V
ID = 250 mA
ID = −250 mA
VGS = 0 V, VDS = 16 V
VGS = 0 V, VDS = −16 V
VGS = 0 V, VDS = 16 V, TJ = 85 °C
VGS = 0 V, VDS = −16 V, TJ = 85 °C
VDS = 0 V, VGS = ±12 V
Gate Threshold Voltage
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
VGS(TH)
RDS(on)
gFS
N
P
N
P
N
P
N
P
VGS = VDS
ID = 250 mA
ID = −250 mA
VGS = 4.5 V , ID = 2.9 A
VGS = −4.5 V , ID = −2.2 A
VGS = 2.5 V , ID = 2.3 A
VGS = −2.5 V, ID = −1.7 A
VDS = 10 V, ID = 2.9A
VDS = −10 V , ID = −2.2 A
Input Capacitance
CISS
N
P
Output Capacitance
COSS
N
P
Reverse Transfer Capacitance
CRSS
N
P
Total Gate Charge
QG(TOT)
N
P
Gate−to−Source Gate Charge
QGS
N
P
Gate−to−Drain “Miller” Charge
QGD
N
P
3. Pulse Test: Pulse Width v 250 ms, Duty Cycle v 2%.
VDS = 10 V
VDS = −10 V
f = 1 MHz, VGS = 0 V
VDS = 10 V
VDS = −10 V
VDS = 10 V
VDS = −10 V
VGS = 4.5 V, VDS = 10 V, ID = 2.9 A
VGS = −4.5 V, VDS = −10 V, ID = −2.2 A
VGS = 4.5 V, VDS = 10 V, ID = 2.9 A
VGS = −4.5 V, VDS = −10 V, ID = −2.2 A
VGS = 4.5 V, VDS = 10 V, ID = 2.9 A
VGS = −4.5 V, VDS = −10 V, ID = −2.2 A
Min Typ Max Unit
20 V
−20
1.0 mA
−1.0
5
−5
±100 nA
0.6 1.2
−0.6 −1.2
0.058 0.080
0.130 0.155
0.077 0.115
0.200 0.240
6.0
6.0
V
W
S
180 pF
185
80
95
25
30
2.6 4.0 nC
3.0 6.0
0.6
0.5
0.7
0.9
http://onsemi.com
2

विन्यास 10 पेज
डाउनलोड[ NTHC5513 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
NTHC5513Power MOSFETON Semiconductor
ON Semiconductor


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English