DataSheet.in

NTHC5513 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - ON Semiconductor

भाग संख्या NTHC5513
समारोह Power MOSFET
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=NTHC5513?> डेटा पत्रक पीडीएफ

NTHC5513 pdf
NTHC5513
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
JunctiontoAmbient (Note 1)
Steady State
tv5
TA = 25°C
RqJA
2. Surface Mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
110
60
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol N/P
Test Conditions
Min Typ Max Unit
OFF CHARACTERISTICS (Note 3)
DraintoSource Breakdown Voltage
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 3)
V(BR)DSS
IDSS
IGSS
N
P
N
P
N
P
VGS = 0 V
ID = 250 mA
ID = 250 mA
VGS = 0 V, VDS = 16 V
VGS = 0 V, VDS = 16 V
VGS = 0 V, VDS = 16 V, TJ = 85 °C
VGS = 0 V, VDS = 16 V, TJ = 85 °C
VDS = 0 V, VGS = ±12 V
20
20
V
1.0
1.0
5
5
±100
mA
nA
Gate Threshold Voltage
DraintoSource On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
VGS(TH)
RDS(on)
gFS
N
P
N
P
N
P
N
P
VGS = VDS
ID = 250 mA
ID = 250 mA
VGS = 4.5 V , ID = 2.9 A
VGS = 4.5 V , ID = 2.2 A
VGS = 2.5 V , ID = 2.3 A
VGS = 2.5 V, ID = 1.7 A
VDS = 10 V, ID = 2.9A
VDS = 10 V , ID = 2.2 A
0.6 1.2
0.6 1.2
0.058 0.080
0.130 0.155
0.077 0.115
0.200 0.240
6.0
6.0
V
W
S
Input Capacitance
CISS
N
VDS = 10 V 180 pF
P
VDS = 10 V
185
Output Capacitance
COSS
N
P
f = 1 MHz, VGS = 0 V
VDS = 10 V
VDS = 10 V
80
95
Reverse Transfer Capacitance
CRSS
N
VDS = 10 V
25
P
VDS = 10 V
30
Total Gate Charge
QG(TOT)
N
VGS = 4.5 V, VDS = 10 V, ID = 2.9 A
2.6 4.0 nC
P VGS = 4.5 V, VDS = 10 V, ID = 2.2 A
3.0 6.0
GatetoSource Gate Charge
QGS N VGS = 4.5 V, VDS = 10 V, ID = 2.9 A
0.6
P VGS = 4.5 V, VDS = 10 V, ID = 2.2 A
0.5
GatetoDrain “Miller” Charge
QGD N VGS = 4.5 V, VDS = 10 V, ID = 2.9 A
0.7
P VGS = 4.5 V, VDS = 10 V, ID = 2.2 A
0.9
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width v 250 ms, Duty Cycle v 2%.
www.onsemi.com
2

विन्यास 9 पेज
डाउनलोड[ NTHC5513 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
NTHC5513Power MOSFETON Semiconductor
ON Semiconductor


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English