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NTHD5905T1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - ON Semiconductor

भाग संख्या NTHD5905T1
समारोह Power MOSFET
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
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NTHD5905T1 pdf
NTHD5905T1
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Maximum JunctiontoAmbient (Note 2)
t v 5 sec
Steady State
RthJA
50
90
Maximum JunctiontoFoot (Drain)
Steady State
RthJF
30
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Static
Gate Threshold Voltage
GateBody Leakage
Zero Gate Voltage Drain Current
VGS(th)
IGSS
IDSS
OnState Drain Current (Note 3)
DrainSource OnState Resistance (Note 3)
ID(on)
rDS(on)
Forward Transconductance (Note 3)
gfs
Diode Forward Voltage (Note 3)
VSD
Dynamic (Note 4)
Total Gate Charge
Qg
GateSource Charge
Qgs
GateDrain Charge
Qgd
TurnOn Delay Time
td(on)
Rise Time
tr
TurnOff Delay Time
td(off)
Fall Time
tf
SourceDrain Reverse Recovery Time
trr
2. Surface Mounted on 1x 1FR4 Board.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. Guaranteed by design, not subject to production testing.
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "8.0 V
VDS = 6.4 V, VGS = 0 V
VDS = 6.4 V, VGS = 0 V,
TJ = 85°C
VDS v 5.0 V, VGS = 4.5 V
VGS = 4.5 V, ID = 3.0 A
VGS = 2.5 V, ID = 2.5 A
VGS = 1.8 V, ID = 1.0 A
VDS = 5.0 V, ID = 3.0 A
IS = 0.9 A, VGS = 0 V
VDS = 4.0 V, VGS = 4.5 V,
ID = 3.0 A
VDD = 4.0 V, RL = 4 W
ID ^ 1.0 A, VGEN = 4.5 V,
RG = 6 W
IF = 0.9 A, di/dt = 100 A/ms
Min
0.45
10
Max
60
110
40
Typ
0.075
0.110
0.150
7.0
0.8
5.5
0.5
1.5
10
45
30
10
30
Unit
°C/W
°C/W
Max Unit
"100
1.0
5.0
V
nA
mA
0.090
0.130
0.180
1.2
A
W
S
V
9.0 nC
15 ns
70
45
15
60
http://onsemi.com
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