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NTZD5110N डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Small Signal MOSFET - ON Semiconductor

भाग संख्या NTZD5110N
समारोह Small Signal MOSFET
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
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NTZD5110N pdf
NTZD5110N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted.)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
60 −
− 71
−V
− mV/°C
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
VGS = 0 V
VDS = 60 V
TJ = 25°C
TJ = 125°C
VGS = 0 V
VDS = 50 V
TJ = 25°C
TJ = 85°C
VDS = 0 V, VGS = "20 V
VDS = 0 V, VGS = "10 V
VDS = 0 V, VGS = "5.0 V
− 1.0 mA
− 500
− 100 nA
− 100
"10
mA
− 450 nA
− 150 nA
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
VGS(TH)
VGS(TH)/TJ
RDS(on)
gFS
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 500 mA
VGS = 4.5 V, ID = 200 mA
VDS = 5.0 V, ID = 200 mA
1.0 − 2.5 V
− 4.0 − mV/°C
− 1.19 1.6
W
− 1.33 2.5
− 80 −
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS (Note 4)
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
VGS = 0 V, f = 1.0 MHz,
VDS = 20 V
VGS = 4.5 V, VDS = 10 V;
ID = 200 mA
− 24.5 −
− 4.2 −
− 2.2 −
− 0.7 −
− 0.1 −
− 0.3 −
− 0.1 −
pF
nC
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
td(ON)
tr
td(OFF)
tf
VGS = 10 V, VDD = 30 V,
ID = 200 mA, RG = 10 W
− 12 −
− 7.3 −
− 63.7 −
− 30.6 −
ns
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 200 mA
TJ = 25°C
TJ = 85°C
0.8 1.2
0.7 −
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Surface−mounted on FR4 board using 1 in. sq. pad size (Cu. area = 1.127 in sq [1 oz] including traces).
3. Pulse Test: pulse width v 300 ms, duty cycle v2%.
4. Switching characteristics are independent of operating junction temperatures.
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