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NTJD1155L डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - ON Semiconductor

भाग संख्या NTJD1155L
समारोह Power MOSFET
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
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NTJD1155L pdf
NTJD1155L
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
OFF CHARACTERISTICS
Q2 DraintoSource Breakdown Voltage
Forward Leakage Current
Q1 GatetoSource Leakage Current
Q1 Diode Forward OnVoltage
ON CHARACTERISTICS
VIN
IFL
IGSS
VSD
VGS2 = 0 V, ID2 = 250 mA
VGS1 = 0 V,
VDS2 = 8.0 V
TJ = 25°C
TJ = 125°C
VDS1 = 0 V, VGS1 = ±8.0 V
IS = 0.4 A, VGS1 = 0 V
ON/OFF Voltage
Q1 Gate Threshold Voltage
Input Voltage
Q2 DraintoSource On Resistance
VON/OFF
VGS1(th)
VIN
RDS(on)
VGS1 = VDS1, ID = 250 mA
VGS1 = VDS1, ID = 250 mA
VON/OFF = 1.5 V
VILIN==14.2.5AV
VIN = 2.5 V
IL = 1.0 A
VIN = 1.8 V
IL = 0.7 A
Load Current
IL VDROP 0.2 V, VIN = 5.0 V,
VON/OFF = 1.5 V
VDROP 0.3 V, VIN = 2.5 V,
VON/OFF = 1.5 V
Min
8.0
1.5
0.4
1.8
1.0
1.0
Typ
0.8
130
170
260
Max
1.0
10
±100
1.1
8.0
1.0
8.0
175
220
320
Unit
V
mA
nA
V
V
V
V
mW
A
VIN
R1
4
6
Q2
2,3
C1
6
VOUT
ON/OFF
CI
R2
5
Q1
1
R2
CO
Figure 1. Load Switch Application
LOAD
GND
Components
Description
R1 Pullup Resistor
R2 Optional SlewRate Control
CO, CI
C1
Output Capacitance
Optional InRush Current Control
*Minimum R1 value should be at least 10 x R2 to ensure Q1 turnon.
Values
Typical 10 kW to 1.0 MW*
Typical 0 to 100 kW*
Usually < 1.0 mF
Typical 1000 pF
http://onsemi.com
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