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NTMD6601NR2G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - ON Semiconductor

भाग संख्या NTMD6601NR2G
समारोह Power MOSFET
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
पूर्व दर्शन
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NTMD6601NR2G pdf
NTMD6601NR2G
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
VGS = 0 V,
VDS = 80 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±15 V
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
Drain-to-Source On Resistance
RDS(on)
CHARGES, CAPACITANCES AND GATE RESISTANCE
VGS = 10 V
VGS = 5.0 V
ID = 2.2 A
ID = 1.0 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS (Note 4)
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
VGS = 0 V, f = 1.0 MHz, VDS = 25 V
VGS = 5.0 V, VDS = 40 V, ID = 1.0 A
VGS = 10 V, VDS = 40 V, ID = 1.0 A
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
BODY - DRAIN DIODE RATINGS (Note 3)
td(ON)
tr
td(OFF)
tf
td(ON)
tr
td(OFF)
tf
VGS = 4.5 V, VDD = 40 V,
ID = 1.0 A, RG = 27 W
VGS = 10 V, VDD = 40 V,
ID = 2.5 A, RG = 47 W
Forward Diode Voltage
VSD
VGS = 0 V
TJ = 25°C
ID = 1.0 A
TJ = 150°C
Reverse Recovery Time
tRR
Charge Time
Discharge Time
Ta VGS = 0 V, dIS/dt = 100 A/ms,
Tb IS = 1.0 A
Reverse Recovery Time
QRR
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
80
1.0
Typ
99.8
1.9
4.6
190
215
220
55
16
5.0
0.4
1.0
2.75
9.0
21
62
52
50
15
95
50
105
0.8
0.6
44
21
23
43
Max Unit
1.0
25
±100
V
mV/°C
mA
nA
3.0 V
mV/°C
215
mW
245
400
100 pF
30
9.0
nC
15 nC
35
105
ns
85
85
ns
1.0 V
ns
86 nC
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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
NTMD6601NR2GPower MOSFETON Semiconductor
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