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FDP020N06B डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDP020N06B
समारोह N-Channel PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDP020N06B?> डेटा पत्रक पीडीएफ

FDP020N06B pdf
Package Marking and Ordering Information
Part Number
FDP020N06B_F102
Top Mark
FDP020N06B
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, Referenced to 25oC
VDS = 48 V, VGS = 0 V
VDS = 48 V, TC = 150oC
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 100 A
VDS = 10 V, ID = 100 A
Dynamic Characteristics
Ciss
Coss
Crss
Coss(er)
Qg(tot)
Qgs
Qgs2
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Threshold to Plateau
Gate to Drain “Miller” Charge
Equivalent Series Resistance(G-S)
VDS = 30 V, VGS = 0 V,
f = 1 MHz
VDS = 30 V, VGS = 0 V
VDS = 30 V, ID = 100 A,
VGS = 10 V
f = 1 MHz
(Note 4)
Min.
60
-
-
-
-
2.5
-
-
-
-
-
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 30 V, ID = 100 A,
VGS = 10 V, RG = 4.7 Ω
(Note 4)
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 100 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, VDD = 30 V, ISD = 100 A,
dIF/dt = 100 A/μs
Notes:
1: Repetitive rating: pulse-width limited by maximum junction temperature
2: Starting TJ = 25°C, L = 3 mH, IAS = 35.2 A
3: ISD 100 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C
4: Essentially independent of operating temperature typical characteristics.
-
-
-
-
-
-
-
-
-
Typ. Max. Unit
-
0.03
-
-
-
-
-
1
500
±100
V
V/oC
μA
nA
3.3 4.5 V
1.65 2.0 mΩ
263 - S
16100
3840
127
5897
206
87
36
34
0.9
20930
4992
-
-
268
-
-
-
-
pF
pF
pF
pF
nC
nC
nC
nC
Ω
74 158 ns
62 134 ns
112 234 ns
42 94 ns
- 313* A
-
1252
A
- 1.25 V
106 - ns
194 - nC
©2011 Fairchild Semiconductor Corporation
FDP020N06B Rev. C8
2
www.fairchildsemi.com

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