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FDH210N08 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel UniFET MOSFET - Fairchild Semiconductor

भाग संख्या FDH210N08
समारोह N-Channel UniFET MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDH210N08?> डेटा पत्रक पीडीएफ

FDH210N08 pdf
Package Marking and Ordering Information
Part Number
FDH210N08
Top Mark
FDH210N08
Package
TO-247
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
BVDSS
/ TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25oC
VDS = 75 V, VGS = 0 V
VDS = 60 V, TJ = 150oC
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain-Source On-Resistance
gFS Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 125 A
VDS = 25 V, ID = 125 A
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 37.5 V, ID = 69 A,
RG = 25
(Note 4)
VDS = 60 V, ID = 125 A,
VGS = 10 V
(Note 4)
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 125 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 125 A,
dIF / dt = 100 A/µs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2.L = 0.4 mH, IAS = 125 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 125 A, di/dt 260 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
Min
75
--
--
--
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ Max Unit
-- -- V
0.1 -- V/oC
-- 20 µA
-- 250 µA
-- 200 nA
-- -200 nA
-- 4.0 V
4.65 5.5 m
200 --
S
8743
2134
262
11340
2778
393
pF
pF
pF
100 210
ns
410 830
ns
630 1270 ns
290 590
ns
232 301 nC
58 -- nC
77 -- nC
-- 210 A
-- 840 A
-- 1.4 V
123 --
ns
420 -- nC
©2007 Fairchild Semiconductor Corporation
FDH210N08 Rev. C0
2
www.fairchildsemi.com

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FDH210N08N-Channel UniFET MOSFETFairchild Semiconductor
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