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FDP075N15A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDP075N15A
समारोह N-Channel PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDP075N15A?> डेटा पत्रक पीडीएफ

FDP075N15A pdf
Package Marking and Ordering Information
Part Number
FDP075N15A_F102
FDB075N15A
Top Mark
FDP075N15A
FDB075N15A
Package
TO-220
D2-PAK
Packing Method
Tube
Tape and Reel
Reel Size
N/A
330 mm
Tape Width
N/A
24 mm
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 A, VGS = 0 V
ID = 250 A, Referenced to 25oC
VDS = 120 V, VGS = 0 V
VDS = 120 V, TC = 150oC
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 A
VGS = 10 V, ID = 100 A
VDS = 10 V, ID = 100 A
Dynamic Characteristics
Ciss
Coss
Crss
Coss(er)
Qg(tot)
Qgs
Qgs2
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Equivalent Series Resistance(G-S)
VDS = 75 V, VGS = 0 V,
f = 1 MHz
VDS = 75 V, VGS = 0 V
VDS = 75 V, ID = 100 A,
VGS = 10 V
f = 1 MHz
(Note 4)
Min.
150
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.1
-
-
-
-
6.25
164
5525
516
21
909
77
26
11
16
2.29
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 75 V, ID = 100 A,
VGS = 10 V, RG = 4.7
(Note 4)
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 100 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, VDD = 75 V, ISD = 100 A,
dIF/dt = 100 A/s
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. Starting TJ = 25C, L = 3 mH, IAS = 19.8 A.
3. ISD 100 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C.
4. Essentially independent of operating temperature typical characteristics.
-
-
-
-
-
-
-
-
-
28
37
62
21
-
-
-
97
264
Quantity
50 units
800 units
Max. Unit
-
-
1
500
±100
V
V/oC
A
nA
4.0 V
7.5 m
-S
7350
685
-
-
100
-
-
-
-
pF
pF
pF
pF
nC
nC
nC
nC
66 ns
84 ns
134 ns
52 ns
130*
520
1.25
-
-
A
A
V
ns
nC
©2011 Fairchild Semiconductor Corporation
FDP075N15A / FDB075N15A Rev. C5
2
www.fairchildsemi.com

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